Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On Resistance
BV
DSS
-20V
C
C
C
C
apable of 2.5V Drive
R
DS(ON)
20m
Fast Switching
I
D
-9.5A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
20020502
AP9620M
Rating
-20
8
-9.5
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-7.6
Pulsed Drain Current
1
-76
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V, I
D
=-9.5A
-
-
20
m
V
GS
=-2.5V, I
D
=-6.0A
-
-
35
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-
-
-1
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-9.5A
-
28
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-9.5A
-
30
-
nC
Q
gs
Gate-Source Charge
V
DS
=-10V
-
6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-5V
-
3.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
26
-
ns
t
r
Rise Time
I
D
=-9.5A
-
500
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-4.5V
-
70
-
ns
t
f
Fall Time
R
D
=1.05
-
300
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
2158
-
pF
C
oss
Output Capacitance
V
DS
=-15V
-
845
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-2.08
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=-2.5A, V
GS
=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
/W when mounted on Min. copper pad.
AP9620M
8V
100
AP9620M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
30
60
90
120
0
2
4
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
-10V
-8.0V
-6.0V
V
GS
=-4.0V
15
20
25
30
35
40
1
2
3
4
5
6
-V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=-9.5A
T
C
=25
0
20
40
60
80
100
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
-10V
-8.0V
-6.0V
V
GS
=-4.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
I
D
=-9.5A
V
GS
=4.5V
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9620M
0
0.5
1
1.5
2
2.5
3
0
30
60
90
120
150
T
c
, Case Temperature (
o
C)
P
D
(W
)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
2
4
6
8
10
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V
DS
(V)
-I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
AP9620M
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V
SD
(V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS
(
t
h
)
(V
)
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
Q
G
, Total Gate Charge (nC)
-V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=-9.5A
V
DS
=-10V
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