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Электронный компонент: AP9435GG

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Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
-30V
Fast Switching Characteristic
R
DS(ON)
50m
Single Drive Requirement
I
D
- 4.2A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
100
/W
Data and specifications subject to change without notice
201021051-1/4
AP9435GG
Rating
- 30
20
- 4.2
0.01
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
Storage Temperature Range
Continuous Drain Current, V
GS
@ 4.5V
3
-3.4
Pulsed Drain Current
1
-20
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation
1.25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
G
D
S
D
G
D
S
SOT-89
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4A
-
-
50
m
V
GS
=-4.5V, I
D
=-2A
-
-
90
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
2
V
DS
=-10V, I
D
=-4A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
10
16
nC
Q
gs
Gate-Source Charge
V
DS
=-25V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
10
-
ns
t
r
Rise Time
I
D
=-1A
-
7
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
26
-
ns
t
f
Fall Time
R
D
=15
-
14
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
520
830
pF
C
oss
Output Capacitance
V
DS
=-25V
-
180
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
R
g
Gate Resistance
f=1.0MHz
-
16
24
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1A, V
GS
=0V
-
-
-1.3
V
t
rr
Reverse Recovery Time
I
S
=-4A, V
GS
=0V,
-
30
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
24
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
2/4
AP9435GG
AP9435GG
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
5
10
15
20
0
2
4
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
V
G
=-3.0V
-10V
-7.0V
-5.0V
-4.5V
0
5
10
15
20
0
2
4
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
V
G
=-3.0V
-10V
-7.0V
-5.0V
-4.5V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
40
80
120
160
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m



)
I
D
=-2A
T
A
=25
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
= -4 A
V
G
=-10V
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP9435GG
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ Ta
R
thja
=100
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
1s
10s
T
A
=25
o
C
Single Pulse
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
-V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=- 4 A
V
DS
=-2 5 V
0
5
10
15
20
0
2
4
6
-V
GS
, Gate-to-Source Voltage (V)
-I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge