Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
-30V
Low On-resistance
R
DS(ON)
53m
Fast Switching
I
D
-5A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Storage Temperature Range
Continuous Drain Current
3
- 4
Pulsed Drain Current
1
- 20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
20020513
AP4953M
Rating
- 30
20
- 5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-5A
-
-
53
m
V
GS
=-4.5V, I
D
=-4A
-
-
90
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-5A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-5A
-
20
-
nC
Q
gs
Gate-Source Charge
V
DS
=-15V
-
3.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-10V
-
2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
12
-
ns
t
r
Rise Time
I
D
=-1A
-
20
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-10V
-
45
-
ns
t
f
Fall Time
R
D
=15
-
27
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
800
-
pF
C
oss
Output Capacitance
V
DS
=-15V
-
425
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-1.67
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
/W when mounted on Min. copper pad.
AP4953M
20V
100
AP4953M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
5
10
15
20
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
-10V
-8.0V
-6.0V
V
GS
=-4.0V
0
5
10
15
20
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
-10V
-8.0V
-6.0V
V
GS
=-4.0V
30
40
50
60
70
80
3
4
5
6
7
8
9
10
11
-V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=-5A
T
C
=25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
GS
=10V
I
D
=5A
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4953M
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
(V)
-I
D
(A
)
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0
1
2
3
4
5
6
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed Th
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
0.5
1
1.5
2
2.5
3
0
50
100
150
T
c ,
Case Temperature (
o
C)
P
D
(W
)
AP4953M
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
10
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V
SD
(V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
-V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
= -5A
V
DS
= -15V
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS
(
t
h
)
(V
)
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