Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
BV
DSS
25V
Fast Switching
R
DS(ON)
8.5m
Simple Drive Requirement
I
D
13A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
2.5
Linear Derating Factor
0.02
Continuous Drain Current
3
10
Pulsed Drain Current
1
50
Gate-Source Voltage
Continuous Drain Current
3
13
Parameter
Rating
Drain-Source Voltage
25
AP4880M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
20
S
S
S
G
D
D
D
D
SO-8
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
25
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=13A
-
-
8.5
m
V
GS
=4.5V, I
D
=10A
-
-
15
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=15V, I
D
=10A
-
20
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=25V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=13A
-
22.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=15V
-
3.3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
15.4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
9
-
ns
t
r
Rise Time
I
D
=1A
-
16
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6.2
,
V
GS
=10V
-
25
-
ns
t
f
Fall Time
R
D
=15
-
50
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
813
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
516
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
224
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
1.92
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=2.3A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
/W when mounted on Min. copper pad.
AP4880M
20V
100
AP4880M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
V
GS
=10V
I
D
=13A
5
7
9
11
13
15
17
19
21
23
2
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=13A
T
C
=25
0
10
20
30
40
50
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4.0V
0
10
20
30
40
50
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4.0V
AP4880M
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
1
2
3
0
50
100
150
T
c ,
Case Temperature (
o
C)
P
D
(W
)
0
3
6
9
12
15
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
AP4880M
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature(
o
C)
V
GS
(
t
h
)
(V
)
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
100
1000
10000
1
6
11
16
21
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Ciss
Ciss
Ciss
Coss
Coss
Coss
Coss
Crss
Crss
Crss
Crss
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
Q
G
, Total Gate Charge (nC)
V
GS
, Ga
te
to
So
urc
e
Vo
lta
g
e
(V)
I
D
=13A
V
DS
=15V
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