Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
30V
Low On-resistance
R
DS(ON)
27m
Fast Switching Characteristic
I
D
7A
P-CH BV
DSS
-30V
R
DS(ON)
49m
Description
I
D
-5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
-30
V
V
GS
Gate-Source Voltage
20
V
I
D
@T
A
=25
Continuous Drain Current
3
-5
A
I
D
@T
A
=70
Continuous Drain Current
3
-4.2
A
I
DM
Pulsed Drain Current
1
-30
A
P
D
@T
A
=25
Total Power Dissipation
W
Linear Derating Factor
W/
T
STG
Storage Temperature Range
T
J
Operating Junction Temperature Range
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Pb Free Plating Product
Parameter
200504042
40
2
AP4501GSD
Thermal Data
30
20
7
-55 to 150
0.016
-55 to 150
5.8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=7A
-
-
27
m
V
GS
=4.5V, I
D
=5A
-
-
50
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=7A
-
12
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=7A
-
9
13
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=1A
-
5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
19
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
645 800
pF
C
oss
Output Capacitance
V
DS
=25V
-
150
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
2
I
S
=7A, V
GS
=0V,
-
16
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
AP4501GSD
100
AP4501GSD
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-5A
-
-
49
m
V
GS
=-4.5V, I
D
=-3A
-
-
75
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-5.3A
-
8
-
S
I
DSS
Drain-Source Leakage Current ( T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current ( T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-5A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
10
-
ns
t
r
Rise Time
I
D
=-1A
-
7
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-10V
-
27
-
ns
t
f
Fall Time
R
D
=15
-
16
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
460 730
pF
C
oss
Output Capacitance
V
DS
=-25V
-
180
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-5A, V
GS
=0V,
-
21
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
2
copper pad of
FR4 board ; 90
/W when mounted on Min. copper pad.
20V
100
20V
100
20V
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP4501GSD
0
10
20
30
40
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10V
8.0V
6.0V
5.0V
V
G
=4. 0 V
0.2
0.8
1.4
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=7A
V
G
= 10V
10
40
70
100
2
5
8
11
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m
)
I
D
=7A
T
A
=25
0
12
24
36
0
2
3
5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
10V
8.0V
6.0V
5.0V
V
G
=4.0V
0.01
0.1
1
10
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
J
=150
o
C
T
J
=25
o
C
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
AP4501GSD
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
e
d
T
h
e
r
mal R
e
s
pons
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
0
3
6
9
12
0
4
8
12
16
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
o
ltage
(
V
)
I
D
=7.0A
V
DS
=16V
V
DS
=20V
V
DS
=24V
10
100
1000
1
7
13
19
25
31
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
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