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Электронный компонент: AP4410M

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
BV
DSS
30V
Fast Switching
R
DS(ON)
13.5m
Simple Drive Requirement
I
D
10A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Continuous Drain Current
3
8
Pulsed Drain Current
1
50
Gate-Source Voltage
Continuous Drain Current
3
10
Parameter
Rating
Drain-Source Voltage
30
200606032
AP4410M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
25
S
S
S
G
D
D
D
D
SO-8
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=10A
-
-
13.5
m
V
GS
=4.5V, I
D
=5A
-
-
22
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=15V, I
D
=10A
-
20
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
13.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=15V
-
4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
7
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=25V
-
14
-
ns
t
r
Rise Time
I
D
=1A
-
16
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
21
-
ns
t
f
Fall Time
R
D
=25
-
15
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1160
-
pF
C
oss
Output Capacitance
V
DS
=15V
-
240
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=2.1A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=5A,
V
GS
=0
V
,
-
17.1
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
/W when mounted on Min. copper pad.
AP4410M
25V
100
AP4410M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
=10A
V
G
=10V
0
50
100
150
200
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
A
=25
o
C
10V
8.0V
6.0V
V
G
=4.0V
0
50
100
150
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
A
=150
o
C
V
G
=4.0V
6.0V
8.0V
10V
10
12
14
16
18
20
3
4
5
6
7
8
9
10
11
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
=10A
T
A
=25
o
C
0.01
0.10
1.00
10.00
100.00
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0
1
2
3
-50
0
50
100
150
T
j
, Jujnction Temperature (
o
C )
V
GS(
t
h)
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
AP4410M
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=10A
V
DS
=15V
10
100
1000
10000
1
6
11
16
21
26
31
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Crss
Coss
Ciss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
5V
Q
GS
Q
GD
Q
G
Charge