Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
BV
DSS
30V
Simple Drive Requirement
R
DS(ON)
26m
Dual N MOSFET Package
I
D
6.8A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
201016031
AP4228M
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
20
Continuous Drain Current
3
6.8
Continuous Drain Current
3
5.5
Pulsed Drain Current
1
40
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
S1 G1
S2
G2
D1
D1
D2
D2
SO-8
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=6A
-
-
26
m
V
GS
=4.5V, I
D
=4A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=6A
-
15
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=6.8A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
10
-
ns
t
r
Rise Time
I
D
=1A
-
9
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
18
-
ns
t
f
Fall Time
R
D
=15
-
6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
580
930
pF
C
oss
Output Capacitance
V
DS
=25V
-
150
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
108
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=6.8A,
V
GS
=0
V
,
-
15
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 135
/W when mounted on Min. copper pad.
AP4228M
AP4228M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
5
10
15
20
25
30
35
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dra
i
n Current (
A
)
T
A
=150
o
C
10V
5.0V
4.0V
V
G
=3.0V
0
5
10
15
20
25
30
35
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dra
i
n Current (
A
)
T
A
=25
o
C
10V
5.0V
4.0V
V
G
=3.0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lized
R
DS(
ON)
I
D
=6A
V
GS
=10V
0
20
40
60
80
2
4
6
8
10
12
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
=6A
T
A
=25
1
1.5
2
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS(
t
h)
(V
)
0.1
1
10
0
0.4
0.8
1.2
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
Tj=25
o
C
Tj=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4228M
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=15V
V
DS
=20V
V
DS
=24V
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
I
D
=6.8A
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
l Resp
o
n
se (
R
thja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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