Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
BV
DSS
30V
Simple Drive Requirement
R
DS(ON)
14m
Dual N MOSFET Package
I
D
10A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
200329041
AP4224M
Rating
30
20
10
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
8
Pulsed Drain Current
1
30
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=10A
-
-
14
m
V
GS
=4.5V, I
D
=7A
-
-
20
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=10A
-
16
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
23
35
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
14
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
12
-
ns
t
r
Rise Time
I
D
=1A
-
8
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
34
-
ns
t
f
Fall Time
R
D
=15
-
16
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1910 3070
pF
C
oss
Output Capacitance
V
DS
=25V
-
400
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
280
-
pF
R
g
Gate Resistance
f=1.0MHz
-
0.9
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
2
I
S
=10A,
V
GS
=0
V
,
-
30
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
24
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
/W when mounted on min. copper pad.
AP4224M
100
AP4224M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
30
60
90
120
150
180
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 25
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3 .0V
0
20
40
60
80
100
120
140
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
= 3 .0V
8
10
12
14
16
18
20
3
5
7
9
11
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= 7 A
T
A
=25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
=1 0 A
V
G
=10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4224M
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=15V
V
DS
=20V
V
DS
=24V
I
D
= 1 0 A
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135
/W
t
T
0.02
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