Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
30V
Low On-resistance
R
DS(ON)
40m
Fast Switching Performance
I
D
5A
P-CH BV
DSS
-30V
R
DS(ON)
80m
Description
I
D
-3.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
30
-30
V
V
GS
Gate-Source Voltage
20
20
V
I
D
@T
A
=25
Continuous Drain Current
3
5
-3.3
A
I
D
@T
A
=70
Continuous Drain Current
3
3.9
-2.7
A
I
DM
Pulsed Drain Current
1
20
-20
A
P
D
@T
A
=25
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Parameter
200817041
AP2851GO
Thermal Data
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=5A
-
-
40
m
V
GS
=4.5V, I
D
=3A
-
-
60
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=5A
-
7
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=5A
-
6
10
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=1A
-
7
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
14
-
ns
t
f
Fall Time
R
D
=15
-
3
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
450
720
pF
C
oss
Output Capacitance
V
DS
=25V
-
100
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.2A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=5A, V
GS
=0V
-
17
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
11
-
nC
AP2851GO
AP2851GO
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
,I
D
=-1mA
-
-0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-3A
-
-
80
m
V
GS
=-4.5V, I
D
=-2A
-
-
120
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-3A
-
4
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-3A
-
5
8
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
0.8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
3
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
8
-
ns
t
r
Rise Time
I
D
=-1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,V
GS
=-10V
-
20
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
430
910
pF
C
oss
Output Capacitance
V
DS
=-25V
-
90
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
I
S
=-3A, V
GS
=0V
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 208
/W when mounted on min. copper pad.
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP2851GO
0
10
20
30
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
30
35
40
45
50
55
60
65
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m
)
I
D
= 3 A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=5A
V
G
=10V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
AP2851GO
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
14
0
4
8
12
16
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
= 5 A
V
DS
= 24 V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
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