Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Fast Switching Characteristic
BV
DSS
-30V
Lower Gate Charge
R
DS(ON)
80m
Small Footprint & Low Profile Package
I
D
- 4A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
200202041
AP2605GY
Rating
-30
20
-4
0.016
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1
-20
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Pb Free Plating Product
-55 to 150
Linear Derating Factor
2
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G
D
S
D
D
D
D
G
S
SOT-26
AP2605GY
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4A
-
-
80
m
V
GS
=-4.5V, I
D
=-3A
-
-
120
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-4A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
5.5
8.8
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
2.6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
7
-
ns
t
r
Rise Time
I
D
=-1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
18
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
400
640
pF
C
oss
Output Capacitance
V
DS
=-25V
-
90
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.6A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-4A, V
GS
=0V,
-
21
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 156
/W when mounted on min. copper pad.
20V
100
AP2605GY
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
I
D
=-4.2A
T
A
=25
o
C
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
6
7
8
9
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
A
=25
o
C
- 10 V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
A
= 150
o
C
- 10 V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
=-4.0A
V
G
=10V
0.5
1
1.5
2
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(
t
h)
(V)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
55
65
75
85
95
105
3
5
7
9
11
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= -3.0 A
T
A
=25
o
C
AP2605GY
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=-24V
I
D
=-4A
10
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A)
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 156
/W
t
T
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