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Электронный компонент: AP2530GY

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Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Low Gate Charge
N-CH BV
DSS
30V
Low On-resistance
R
DS(ON)
72m
Surface Mount Package
I
D
3.3A
RoHS Compliant
P-CH BV
DSS
-30V
R
DS(ON)
150m
Description
I
D
-2.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
V
DS
Drain-Source Voltage
30
-30
V
V
GS
Gate-Source Voltage
20
20
V
I
D
@T
A
=25
Continuous Drain Current
3
3.3
-2.3
A
I
D
@T
A
=70
Continuous Drain Current
3
2.6
-1.8
A
I
DM
Pulsed Drain Current
1
10
-10
A
P
D
@T
A
=25
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
110
/W
Data and specifications subject to change without notice
Parameter
200425051-1/7
AP2530GY
Pb Free Plating Product
G2
D2
S2
G1
D1
S1
D1
S1
G1
S2
G2
D2
SOT-26
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=3A
-
-
72
m
V
GS
=4.5V, I
D
=2A
-
-
125
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=3A
-
4
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=3A
-
3
5
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=1A
-
8
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
11
-
ns
t
f
Fall Time
R
D
=15
-
2
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
170
270
pF
C
oss
Output Capacitance
V
DS
=25V
-
50
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
R
g
Gate Resistance
f=1.0MHz
-
0.5
0.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=0.9A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=3A, V
GS
=0V
-
14
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
7
-
nC
2/7
AP2530GY
AP2530GY
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-2A
-
-
150
m
V
GS
=-4.5V, I
D
=-1A
-
-
280
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-2A
-
2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V ,V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-2A
-
3
5
nC
Q
gs
Gate-Source Charge
V
DS
=-25V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
6
-
ns
t
r
Rise Time
I
D
=-1A
-
8
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-5V
-
17
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
150
240
pF
C
oss
Output Capacitance
V
DS
=-25V
-
50
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
R
g
Gate Resistance
f=1.0MHz
-
8
12
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
SD
Forward On Voltage
2
I
S
=-0.9A, V
GS
=0V
-
-
-1.3
V
t
rr
Reverse Recovery Time
I
S
=2A, V
GS
=0V,
-
15
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t<5sec ; 180
/W when mounted on min. copper pad.
3/7
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4/7
AP2530GY
0
2
4
6
8
10
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10 V
7.0 V
5.0 V
4.5 V
V
G
= 3.0 V
0
2
4
6
8
10
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
V
G
= 3.0 V
10 V
7.0 V
5.0 V
4.5 V
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=3A
V
G
=10V
0
1
2
3
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
50
90
130
170
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m
)
I
D
= 2 A
T
A
=25
o
C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
AP2530GY
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
0
1
2
3
4
5
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
= 3 A
V
DS
= 25 V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 180/W
t
T
0.01