Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
900V
Low On-resistance
R
DS(ON)
7.2
Fast Switching Characteristics
I
D
1.9A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.0
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data & specifications subject to change without notice
AP02N90H/J
36
-55 to 150
Parameter
1.9
1.9
1.2
Parameter
Rating
900
Pb Free Plating Product
200418063-1/4
Storage Temperature Range
-55 to 150
6
62.5
Linear Derating Factor
0.5
30
G
D S
TO-251(J)
G D
S
TO-252(H)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for low-
profile applications.
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
900
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.8
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=0.85A
-
-
7.2
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=1.9A
-
2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=900V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=720V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=30V
-
-
100
nA
Q
g
Total Gate Charge
3
I
D
=1.9A
-
12
20
nC
Q
gs
Gate-Source Charge
V
DS
=540V
-
2.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
4.7
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=450V
-
10
-
ns
t
r
Rise Time
I
D
=1.9A
-
5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
18
-
ns
t
f
Fall Time
R
D
=236
-
9
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
630
1000
pF
C
oss
Output Capacitance
V
DS
=25V
-
40
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
3
I
S
=1.9A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
I
S
=1.9A, V
GS
=0V,
-
360
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
1.8
-
C
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=20mH , R
G
=25
, I
AS
=1.9A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP02N90H/J
AP02N90H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0
3
6
9
12
15
18
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
=25
o
C
V
G
=4.5V
10V
8.0V
6.0V
5.0V
0.00
0.25
0.50
0.75
1.00
1.25
0
3
6
9
12
15
18
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
=150
o
C
10V
8.0V
6.0V
5.0V
V
G
=4.5V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
N
o
rmalize
d
R
DS(
ON)
I
D
= 0.85 A
V
G
=10V
0.0
0.5
1.0
1.5
2.0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
Junction Temperature (
o
C)
N
o
rmalize
d
BV
DSS
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP02N90H/J
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
14
0
4
8
12
16
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
Voltage
(V)
V
DS
= 180 V
V
DS
= 360 V
V
DS
= 540 V
I
D
= 1.9 A
1
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
The
r
mal Re
sponse
(
R
thjc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.
SINGLE
0.01
0.10
1.00
10.00
0.1
1
10
100
1000
10000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
DC
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