Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
600V
Fast Switching Characteristics
R
DS(ON)
12
Simple Drive Requirement
I
D
160mA
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
A
=25
Continuous Drain Current, V
GS
@ 10V
mA
I
D
@T
A
=100
Continuous Drain Current, V
GS
@ 10V
mA
I
DM
Pulsed Drain Current
1
mA
P
D
@T
C
=25
Total Power Dissipation
W
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
Max.
150
/W
Data & specifications subject to change without notice
200530031
Storage Temperature Range
-55 to 150
300
0.83
100
Parameter
Rating
600
AP01L60T
-55 to 150
Parameter
160
30
G
D
S
TO-92
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
600
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.8
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=0.5A
-
-
12
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=0.5A
-
0.8
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=600V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=1A
-
4.0
-
nC
Q
gs
Gate-Source Charge
V
DS
=480V
-
1.0
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
1.1
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=300V
-
6.6
-
ns
t
r
Rise Time
I
D
=1A
-
5.0
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
11.7
-
ns
t
f
Fall Time
R
D
=300
-
9.2
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
170
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
30.7
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V
-
-
160
mA
V
SD
Forward On Voltage
3
I
S
=160mA, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by safe operating area.
3.Pulse width <300us , duty cycle <2%.
AP01L60T
30V
100
AP01L60T
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
Norm
alize
d
R
DS(
ON)
I
D
=0.5A
V
GS
=10V
0
0.5
1
1.5
0
12
24
36
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
A
=25
o
C
10V
6.0V
5.5V
5.0V
V
GS
=4.5V
0
0.25
0.5
0.75
1
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
A
=150
o
C
10V
5.0V
4.5V
V
GS
=4.0V
0.01
0.1
1
10
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A)
T
j
= 150
o
C
T
j
= 25
o
C
1
2
3
4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS(
t
h)
(V)
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
B
V
DSS
(V)
AP01L60T
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0
4
8
12
16
0
1.5
3
4.5
6
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=1.0A
V
DS
=480V
1
10
100
1000
1
10
19
28
V
DS ,
Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0
10
20
30
40
0
50
100
150
T
A
, Case Temperature (
o
C )
P
D
(W)
0
0.3
0.6
0.9
1.2
25
50
75
100
125
150
T
A
, Case Temperature (
o
C )
I
D
, Dra
i
n Current (
A
)
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